Fig. 9
Voltage- and current-clamp recordings of Anatomic RealDRG™ on Qube384. A Representative current traces with holding voltage at − 90 mV. B Current-clamp recording: holding voltage at − 90 mV, ramp current clamp was elicited by injecting current from − 100 pA to 100 pA with 500 or 1000 ms duration. C, D Qube384 experiment success rates and current expression levels during culture period of 28 days. C Success rate indicates all the cells passed the criteria of Rmem > 200 MΩ, the rates were decreased with longer culture period, which are 54 ± 5% (n = 3), 52 ± 5% (n = 3), 41 ± 5% (n = 4), and 43 ± 7% (n = 4), respectively, for DIV16, 21, 28, and 35 days. For the cells passed membrane resistance and cell size filters, average expression levels of Kv, Nav channels, and AP firings are 90–97%, 60–77%, and 60–67%, respectively. D Current densities were measured at depolarizations to − 10 mV, 20 ms for Nav currents, and + 60 mV, 500 ms for Kv currents. E Current traces with internal solution of KF (black) and after exchanging to CsF based internal solution (red). Currents were elicited by 10 mV stepwise voltage increasing from − 90 to + 60 mV for 300 ms. F Current–voltage relationship curve were all normalized to the current amplitudes at + 60 mV before IC exchange. G Family of current traces in control and 0.5 µM TTX groups by using the same voltage protocol in Fig. 1A. H Current–voltage relationship curves, all the current amplitudes were normalized to the control currents at voltage of − 10 mV (Data showed DIV21 cells). I Current traces at voltage − 10 mV for control (red), 0.5 µM TTX (blue), and 10 µM A-803467 in 0.5 µM TTX (Magenta). J Current densities of 0.5 µM TTX and 10 µM A-803467 in 0.5 µM TTX for DIV21, 28, and 35